CCD Test

CCD Test report


EEV 44-82
CCD name : Satriani
Serial number : 8462-14-2
Type : Backside, Single layer AR Pixel size 15x15 µm
Number of photosensitive pixels 2048 x 4102 [HxV]
Number of outputs : 2
Overall rating : Science

 

 

Quantum Efficiency, PRNU


Clock mode: read 350kps LR stripe512
Conversion Factor= 1.900e-/ADU ±0.006 for 24921.5ADU
RMS noise = 4.2e- ±0.4

CCD temperature : -140Cº


Window area is : X1= 59 X2= 1067 Y1= 9 Y2= 508
Bandwidth 5nm

Wav. PRNU rms% QE%
320 2.77 35.1 ±0.99
330 2.43 39.8 ±1.1
340 2.27 43 ±0.84
350 2.24 45.1 ±0.44
360 2.13 48.5 ±0.48
370 1.83 54.9 ±0.54
380 1.37 63.3 ±0.63
390 1.07 75.1 ±0.77
400 0.949 80.1 ±0.81
420 0.819 85.7 ±0.86
440 0.789 88.1 ±0.88
460 0.758 88.1 ±0.88
500 0.715 87.4 ±0.88
540 0.695 85.7 ±0.86
560 0.686 84.2 ±0.84
600 0.671 82.2 ±0.81
640 0.667 79.6 ±0.78
660 0.659 77.6 ±0.75
700 0.796 72.1 ±0.67
740 1.02 64.2 ±0.58
760 1.16 59.8 ±0.53
800 1.46 52.6 ±0.45
840 1.76 44.9 ±0.38
900 2.55 28 ±0.22
940 4.33 15.7 ±0.12
1000 7.08 4.39 ±0.033
1040 7.35 0.81 ±0.006
1100 12.3 0.0912 ±0.00068


Cosmetic defects

 

flat field

350nm (UV), bandwidth 5nm

invalid link: /sci/facilities/develop/detectors/optdet/CCDtestbench/EEV/Satriani/ImagesMeasurement/Flat350nm.jpg
High level

invalid link: /sci/facilities/develop/detectors/optdet/CCDtestbench/EEV/Satriani/ImagesMeasurement/LowLevelFlat350nm.JPG
Low level

 

600 nm, bandwidth 5nm


High level

invalid link: /sci/facilities/develop/detectors/optdet/CCDtestbench/EEV/Satriani/ImagesMeasurement/LowLevelFlat600nm.JPG
Low level

 

900 nm, bandwidth 5nm


High level

invalid link: /sci/facilities/develop/detectors/optdet/CCDtestbench/EEV/Satriani/ImagesMeasurement/LowLevelFlat900nm.JPG
Low level invalid link: /sci/facilities/develop/detectors/optdet/CCDtestbench/EEV/Satriani/ImagesMeasurement/sFlatLowLevel900nm.JPG

Type of defect Location (x,y) Number of pixels affected
trap x=540, y=3564 500
hot column x=839, y=995 3000

 

 

Bias



Nice bias frame...
Type of defect Location Number of pixels affected
 

3 median stacked image of one hour exposure each at -120C

Long exposure dark image

Type of defect Location Number of pixels affected

 

Readout noise/Conversion factor



Left readout port
Readout speed: 166kps
Conversion Factor= 1.761e-/ADU ±0.005 for 27182.6ADU
RMS noise = 3.9e- ±0.3

Right readout port
Readout speed: 166kps
Conversion Factor= 1.738e-/ADU ±0.006 for 27281.6ADU
RMS noise = 4.1e- ±0.3

Left readout port
Readout speed: 350kps
Conversion Factor= 1.908e-/ADU ±0.006 for 26984.6ADU
RMS noise = 4.2e- ±0.4

Rigth readout port
Right readout speed: 350kps
Conversion Factor= 1.891e-/ADU ±0.006 for 26914.7ADU
RMS noise = 4.4e- ±0.4


 

Linearity (TDI method)

not available  

 

Dark current

to be calculated  

Charge Transfer Efficiency (CTE)

Horizontal CTE = 0.9999990
Vertical CTE = 0.999997